Strained-Si Heterostructure Field Effect Devices

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This book brings together the materials science, manufacturing processes, and innovative research and developments of SiGe and strained-Si for the first time in book form. It contains the latest state-of-the-art information on strain engineering in silicon CMOS and strained-Si-based integrated circuit technology as well as strain-engineered MOSFETs. The book presents various aspects of silicon heterostructure materials, processes, devices, and applications. It also includes up-to-date research results, a comprehensive list of seminal references, 300 figures, and 30 tables. The diversity of R&D, activities and results presented in this book will undoubtedly spark further development in the field.