Metal Induced Crystallization and Polysilicon ThinFilm Transistors

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Nowadays, active-matrix addressing using a-Si TFTs isdominating in the flat panel display markets.However, low temperature polysilicon has beenproposed and considered to be a promising alternativetechnology. Metal induced crystallization (MIC) isone of the methods to obtain high quality polysiliconfilms at low temperatures.A few technologies are presented in this monograph, which improve the quality of MIC polysilicon film andhence the performance of TFTs built on. Amelioration of MIC processes has been made toproduce high performance polysilicon TFTs usingsolution based MIC (SMIC) and defined-grain MIC(DG-MIC) methods.Novel post-annealing technologies are also introducedto reduce the micro-defects in MIC polysilicon filmand hence to achieve better performance. Thesetechnologies include YAG laser post-annealing andflash lamp post-annealing. Particularly, it is thefirst time to report the application of flash lampannealing technology in the fabrication of lowtemperature polysilicon and TFTs.