Gadolinium Oxide / Silicon Thin Film Heterojunction Solid-State Neutron Detector

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The internal conversion electron emission from the de-excitation of the Gd-158m nucleus was explored as a means for neutron detection. Thin film gadolinium oxide (Gd2O3) and p-type silicon heterojunction diodes were produced using a supercritical water deposition process. Pulse height spectroscopy was conducted on the novel diodes while they were subjected to a moderated plutonium-beryllium (PuBe) source flux of 104 thermal neutrons/cm2 s. Coincident gamma spectroscopy was employed to verify the 1107.6 keV photon emissions from the diode indicative of successful neutron capture by Gd-157 and the subsequent de-excitation of the Gd-158m nucleus. Neutron capture in the diodes could not be confirmed experimentally. The diodes were found to be sensitive to gamma rays between 10 and 20 keV.